New 15V, 25V, and 40V eGaN FETs provide extremely low on-resistance, high current handling, and outstanding radiation tolerance for high-density power conversion in space
[These components] demonstrate exceptional resistance to radiation, including TID immunity… while surpassing the electrical performance of today’s best silicon MOSFETs operating on Earth.”— Bel Lazar, CEO of EPC SpaceANDOVER, MA, UNITED STATES, August 18, 2026 /EINPresswire.com/ — EPC Space, a company specializing in radiation-hardened, high-performance, and enhanced-reliability GaN discrete transistors, integrated circuits, and modular devices, today announced three new eGaN® power transistors housed in plastic surface-mount packages. These products are engineered to enable high-performance power conversion for next-generation space computing systems.
The EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH combine extremely low on-resistance, high current capacity, and rapid switching performance in compact PQFN packages featuring backside thermal pads. Their minimal conduction losses and industry-leading switching figures of merit facilitate high efficiency and power density, all with zero reverse-recovery charge. Collectively, these attributes allow for smaller, more efficient power conversion designs in space-constrained architectures. All three devices offer outstanding radiation tolerance: TID > 1 Mrad, SEE LET(Si) 85 MeV cm2/mg, and neutron > 4E15 n/cm2.
The EPC7050PCSH is a 15 V component with a continuous current rating of 101 A and a typical RDS(on) of 0.28 mΩ. The EPC7066PCSH is rated at 25 V and 101 A, with a typical RDS(on) of 0.37 mΩ, while the EPC7065PCSH provides a 40 V rating, 101 A continuous current capability, and a typical RDS(on) of 0.5 mΩ.
All three products are intended for synchronous rectifier applications on the secondary side of intermediate bus converters with output voltages spanning 5V to 12V, delivering an industry-leading low RDS(on) × QG figure of merit to support higher-frequency and higher-efficiency operation. These devices also target point-of-load buck converters and IVRs supplying 0.8V core voltage for processors.
“These devices target voltage regulator module (VRM), intermediate voltage regulation (IVR), point-of-load (POL), and intermediate bus converter (IBC) applications to power space compute assets such as the Versal SoC or NVIDIA GPUs,” said Bel Lazar, CEO of EPC Space. “They exhibit exceptional radiation hardness, including TID immunity and robustness to neutron and single-event effects, while offering electrical performance superior to the best silicon MOSFETs operating on the ground today.”
With AI and high-performance computing expanding into space, the ability to deliver reliable power to increasingly demanding processors and accelerators is becoming a critical element of system design. EPC Space’s latest eGaN devices address this challenge by merging radiation resilience with the electrical performance and power density required by next-generation space compute platforms.
For orders of 500 units, engineering models are priced at 85 USD, and Rad Hard space-qualified versions are priced at 125 USD.
About EPC Space
EPC Space delivers revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other demanding environments.
Radiation-hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
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EPC Space: Maurizio Di Paolo Emilio – email: maurizio.dipaoloemilio@epc-co.com
Maurizio Di Paolo Emilio
Efficient Power Conversion
maurizio.dipaoloemilio@epc-co.com
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